《Springer手冊精選系列·晶體生長手冊（第5冊）：晶體生長模型及缺陷表征（影印版）》介紹了生長工藝和缺陷形成的模型。這些章節(jié)驗(yàn)證了工藝參數(shù)和產(chǎn)生晶體質(zhì)量問題包括缺陷形成的直接相互作用關(guān)系。隨后的PartG展示了結(jié)晶材料特性和分析的發(fā)展。PartF和G說明了預(yù)測工具和分析技術(shù)在幫助高質(zhì)量的大尺寸晶體生長工藝的設(shè)計(jì)和控制方面是非常好用的。
Govindhan Dhanaraj is the Manager of Crystal Growth
Technologies at Advanced Renewable Energy Company （ARC Energy） at
Nashua， New Hampshire （USA） focusing on the growth of large size
sapphire crystals for LED lighting applications， characterization
and related crystal growth furnace development. He received his PhD
from the Indian Institute of Science， Bangalore and his Master of
Science from Anna University （India）. Immediately after his
doctoral degree， Dr. Dhanaraj joined a National Laboratory，
presently known as Rajaramanna Center for Advanced Technology in
India， where he established an advanced Crystal Growth Laboratory
for the growth of optical and laser crystals. Prior to joining ARC
Energy， Dr. Dhanaraj served as a Research Professor at the
Department of Materials Science and Engineering， Stony Brook
University， NY， and also held a position of Research Assistant
Professor at Hampton University， VA. During his 25 years of focused
expertise in crystal growth research， he has developed optical，
laser and semiconductor bulk crystals and SiC epitaxial films using
solution， flux， Czochralski， Bridgeman， gel and vapor methods， and
characterized them using x-ray topography， synchrotron topography，
chemical etching and optical and atomic force microscopic
techniques. He co-organized a symposium on Industrial Crystal
Growth under the 17th American Conference on Crystal Growth and
Epitaxy in conjunction with the 14th US Biennial Workshop on
Organometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009.
Dr. Dhanaraj has delivered invited lectures and also served as
session chairman in many crystal growth and materials science
meetings. He has published over 100 papers and his research
articles have attracted over 250 rich citations.
縮略語
PartF 晶體生長及缺陷模型
36 熔體生長晶體體材料的傳導(dǎo)和控制
36.1 運(yùn)輸過程的物理定律
36.2 熔體的流動結(jié)構(gòu)
36.3 外力對流動的控制
36.4 前景
參考文獻(xiàn)
37 Ⅲ族氮化物的氣相生長
37.1 Ⅲ族氮化物的氣相生長概述
37.2 AIN/GaN氣相淀積的數(shù)學(xué)模型
37.3 氣相淀積AIN/GaN的表征
37.4 GaN的IVPE生長模型——個(gè)案研究
37.5 氣相GaN/AIN膜生長的表面形成
37.6 結(jié)語
參考文獻(xiàn)
38 生長直拉硅晶體中連續(xù)尺寸量子缺陷動力學(xué)
38.1 微缺陷的發(fā)現(xiàn)
38.2 無雜質(zhì)時(shí)的缺陷動力學(xué)
38.3 有氧時(shí)的直拉缺陷動力學(xué)
38.4 有氮時(shí)的直拉缺陷動力學(xué)
38.5 直拉硅單晶中空位的橫向合并
38.6 結(jié)論
參考文獻(xiàn)
39 熔體基底化合物晶體生長中應(yīng)力和位錯(cuò)產(chǎn)生的模型
39.1 綜述
39.2 晶體生長過程
39.3 半導(dǎo)體材料的位錯(cuò)分布
39.4 位錯(cuò)產(chǎn)生的模型
39.5 晶體的金剛石結(jié)構(gòu)
39.6 半導(dǎo)體的變形特性
39.7 Haasen模型對晶體生長的應(yīng)用
39.8 替代模式
39.9 模型概述和數(shù)值實(shí)現(xiàn)
39.1 0數(shù)值結(jié)果
39.1 1總結(jié)
參考文獻(xiàn)
40 BS和EFG系統(tǒng)中的質(zhì)量和熱量傳輸
40.1 雜質(zhì)分布的基預(yù)測模型——垂直BS系統(tǒng)
40.2 雜質(zhì)分布的基預(yù)測模型-EFG系統(tǒng)
參考文獻(xiàn)
PartG 缺陷表征及技術(shù)
41晶體層結(jié)構(gòu)的X射線衍射表征
41.1 X射線衍射
41.2 層結(jié)構(gòu)的基本直接X射線衍射分析
41.3 設(shè)備和理論思考
41.4 從低到高的復(fù)雜性分析實(shí)例
41.5 快速分析
41.6 薄膜微映射
41.7 展望
參考文獻(xiàn)
42 晶體缺陷表征的X射線形貌技術(shù)
42.1 X射線形貌的基本原則
42.2 X射線形貌技術(shù)的發(fā)展歷史
42.3 X射線形貌技術(shù)和幾何學(xué)
42.4 X射線形貌技術(shù)理論背景
42.5 X射線形貌上缺陷的對比原理
42.6 X射線形貌上的缺陷分析
42.7 目前的應(yīng)用狀況和發(fā)展
參考文獻(xiàn)
……
43 半導(dǎo)體的缺陷選擇性刻蝕
44 晶體的透射電子顯微鏡表征
45 點(diǎn)缺陷的電子自旋共振表征
46 半導(dǎo)體缺陷特性的正電子湮沒光譜表征
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