目錄
序
第一篇 自傳
幼年時(shí)光 3
插曲 7
初入小學(xué) 8
遠(yuǎn)足與講演 10
夜“逃”紅軍 11
嶄新的小學(xué)生活 12
侯集鎮(zhèn)的3 年初中生活 14
夜驚 15
雪夜宿房營(yíng) 16
入伙 18
緊張有趣的課外活動(dòng) 19
南陽(yáng)第二高中 20
只身北上南開(kāi)求學(xué) 23
膽戰(zhàn)心驚的高等數(shù)學(xué)課 26
共產(chǎn)主義暑假 27
毛主席視察南開(kāi)大學(xué) 28
3 年困難時(shí)期的大學(xué)生活 29
早期科研工作概述 33
什剎海黑夜救同事 37
天津小站勞動(dòng)鍛煉 38
1978 年中國(guó)物理學(xué)會(huì)年會(huì)趣事 40
變溫霍爾系數(shù)測(cè)量系統(tǒng)建設(shè) 41
留學(xué)瑞典隆德大學(xué)固體物理系 42
1984 年回國(guó)后的研究工作 45
第二篇 論著選編
硅的低溫電學(xué)性質(zhì) 49
Evidence that the gold donor and acceptor in silicon are two levels of the same defect 57
Optical properties of iron doped AlxGa1-xAs alloys 62
Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs 73
Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx 89
Acceptor associates and bound excitons in GaAs：Cu 95
Localization of excitons to Cu-related defects in GaAs 116
Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs 128
混晶半導(dǎo)體中深能級(jí)的展寬及其有關(guān)效應(yīng) 140
Electronic properties of an electron-attractive complex neutral defect in GaAs 151
硅中金施主和受主光電性質(zhì)的系統(tǒng)研究 158
A novel model of “new donors” in Czochralski-grown silicon 169
Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment 177
SI-GaAs 單晶熱穩(wěn)定性及其電學(xué)補(bǔ)償機(jī)理研究 185
Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures 195
Simulation of lateral confinement in very narrow channels 201
Theoretical investigation of the dynamic process of the illumination of GaAs 209
Effect of image forces on electrons confined in low-dimensional structures under a magnetic field 222
Photoluminescence studies of single submonolayer InAs structures grown on GaAs(001)matrix 234
Influence of DX centers in the Alx Ga1-x As barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs / AlGaAs modulation-doped heterostructure 240
Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells 247
Ordering along ？111？ and ？100？ directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 252
Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer 259
Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions 264
808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 269
Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs 275
半導(dǎo)體材料的現(xiàn)狀和發(fā)展趨勢(shì) 283
Effects of annealing on self-organized InAs quantum islands on GaAs(100) 285
Wurtzite GaN epitaxial growth on a Si(001)substrate using γ-Al2O3 as an intermediate layer 291
High-density InAs nanowires realized in situ on(100)InP 298
High power continuous-wave operation of self-organized In(Ga)As / GaAs quantum dot lasers 304
Quantum-dot superluminescent diode： A proposal for an ultra-wide output spectrum 306
Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices 317
High-performance strain-compensated InGaAs / InAlAs quantum cascade lasers 322
Research and development of electronic and optoelectronic materials in China 328
半導(dǎo)體量子點(diǎn)激光器研究進(jìn)展 339
High-power and long-lifetime InAs / GaAs quantum-dot laser at 1080nm 349
Self-assembled quantum dots， wires and quantum-dot lasers 355
Controllable growth of semiconductor nanometer structures 365
Effect of In0. 2Ga0. 8As and In0. 2Al0. 8As combination layer on band offsets of InAs quantum dots 372
信息功能材料的研究現(xiàn)狀和發(fā)展趨勢(shì) 380
High-performance quantum-dot superluminescent diodes 395
Time dependence of wet oxidized AlGaAs / GaAs distributed Bragg reflectors 400
Materials science in semiconductor processing 407
半導(dǎo)體照明將觸發(fā)照明光源的革命 409
Study of the wetting layer of InAs / GaAs nanorings grown by droplet epitaxy 415
Broadband external cavity tunable quantum dot lasers with low injection current density 422
Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 432
19μm quantum cascade infrared photodetectors 442
High-performance operation of distributed feedback terahertz quantum cascade lasers 450
Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells 456
Room temperature continuous wave quantum dot cascade laser emitting at 7.2μm 474
第三篇 學(xué)術(shù)貢獻(xiàn)
忍受輻照傷痛，換來(lái)我國(guó)空間用硅太陽(yáng)電池的定型投產(chǎn) 489
挑戰(zhàn)國(guó)際權(quán)威，澄清GaAs 和硅中深能級(jí)物理本質(zhì) 491
“863”十年，掌舵我國(guó)新型半導(dǎo)體材料與器件發(fā)展 494
任“S-863”專(zhuān)家組長(zhǎng)，開(kāi)展新材料領(lǐng)域戰(zhàn)略研究 498
任咨詢(xún)組組長(zhǎng)，為“973”材料領(lǐng)域發(fā)展做出重要貢獻(xiàn) 499
開(kāi)拓創(chuàng)新，解決“信息功能材料相關(guān)基礎(chǔ)問(wèn)題” 501
推動(dòng)材料基礎(chǔ)研究，實(shí)施光電信息功能材料重大研究計(jì)劃 503
第四篇 回憶
半導(dǎo)體材料科學(xué)實(shí)驗(yàn)室的籌建與初期發(fā)展歷程回顧 507
深情厚誼，歷久彌堅(jiān) 509
王占國(guó)院士科研事跡回顧 511
一段往事 514
王占國(guó)院士支持南昌大學(xué)GaN 研究記事 515
我生命中的貴人 517
賀王占國(guó)老師80 壽辰 519
往事點(diǎn)滴 521
在王占國(guó)導(dǎo)師身邊的日子 523
我們的大導(dǎo)師王占國(guó)院士 526
我眼中的王占國(guó)院士 528
德高望重，仰之彌高 529
超寬禁帶半導(dǎo)體材料研究組發(fā)展歷程 531
高山仰止 心念恩師 533
師道山高 535
人生楷模 學(xué)習(xí)的榜樣 537
諄諄教誨 潤(rùn)物無(wú)聲 539
桃李遍天下 541
記與王老師交往的二三事 544
第五篇 附錄
個(gè)人簡(jiǎn)歷 549
大事記 550
學(xué)術(shù)交流目錄 555
獲獎(jiǎng)目錄 563
論著目錄 564
專(zhuān)利目錄 610
培養(yǎng)學(xué)生簡(jiǎn)況 618
后記 635