SOI——納米技術(shù)時代的高端硅基材料進展
納米技術(shù)時代的高端硅基材料——SOI、sSOI和GOI
SOI技術(shù)的發(fā)展動態(tài)
硅基光電子材料和器件的進展和發(fā)展趨勢
Fabrication of SiGe-on-insulator and applications for strained Si
Overview of SOI materials technology in China
SOI新材料的制備科學(xué)
以注氧隔離（SIMOX）技術(shù)制備高阻SOI材料
硅中注H+引起的缺陷和應(yīng)力以及剝離的機制
以AlN為絕緣埋層的新結(jié)構(gòu)SOAN材料
多孔硅外延層轉(zhuǎn)移技術(shù)制備SOI材料
ELTRAN技術(shù)制備雙埋層SOIM新結(jié)構(gòu)
SOI新結(jié)構(gòu)——SOI研究的新動向
Fabrication of silicon．on．AlN novel structure and its residual strain characterization·
Buried tungsten silicide layer in silicon on insulator substrate by Smart-cut
Void—free low-temperature silicon direct—bonding technique using plasma activation
Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on P+porous silicon
Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon
Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator
Study of SOI substrates incorporated with buried MoSiz layer
SOI材料與器件特有的物理效應(yīng)
S0I MOSFET浮體效應(yīng)研究
SOI MOSFET的自加熱效應(yīng)研究
S0I器件的輻射效應(yīng)及其在抗輻射電子學(xué)方面的應(yīng)用進展
Evolution of hydrogen and helium CO-implanted single-crystal silicon during annealing
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SGOI新結(jié)構(gòu)和應(yīng)變硅的制備科學(xué)
SOI技術(shù)的若干應(yīng)用研究